 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION mar 03 - ISSUE : 2 ARF794LT Repetitive voltage up to Mean forward current Surge current 6000 V 1160 A 20 kA Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 6000 6100 V V mA 3200 V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 square,50 Hz,Th=55C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125 1160 1220 20 2000 x1E3 25 125 125 5.6 2.10 1.40 A A kA As V V mohm I t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 1000 A 100 V 1000 A 500 A/s V di/dt= 250 A/s 125 125 C A s 4000 C A 125 1600 J di/dt= 500 A/s 125 V MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 9.5 2 -30 / 125 46.0 / 54.0 1150 C/kW C/kW C kN g ORDERING INFORMATION : ARF794LT S 60 standard specification VRRM/100 ARF794LT FAST RECOVERY DIODE TARGET SPECIFICATION mar 03 - ISSUE : 2 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 C 25 5000 4500 4000 Forward Current [A] 3500 ITSM [kA] 3000 2500 2000 1500 1000 500 0 0.7 1.7 2.7 3.7 4.7 Forward Voltage [V] 0 1 5 15 20 SURGE CHARACTERISTIC Tj = 125 C 10 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 10.0 9.0 8.0 7.0 Zth j-h [C/kW] 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
Price & Availability of ARF794LTS60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |